AO3407A SMD (Small Signal Mosfet P-Channel)

Description

(O3407A )P-Channel Enhancement Mode Field Effect TransistorType Designator: AO3407A Marking Code: X7* Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ - Maximum Power Dissipation: 1.4 W |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V |Id|ⓘ - Maximum Drain Current: 4.3 A Tjⓘ - Maximum Junction Temperature: 150 °C Qgⓘ - Total Gate Charge: 9.2 nC trⓘ - Rise Time: 5.5 nS Cossⓘ - Output Capacitance: 100 pF Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm Package: SOT23 datasheet : https://pl-1.org/getproductfile.axd?id=12476&filename=AO3407.pdf