K1307 (2SK1307) MOSFET N -Ch (100V , 18A)

Description

Features : Type Designator: K1307 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 48 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V Maximum Drain Current |Id|: 18 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 72(max) nC Rise Time (tr): 44 nS Drain-Source Capacitance (Cd): 560 pF Maximum Drain-Source On-State Resistance (Rds): 0.086(typ) Ohm Package: TO220FP