IRF620 N-channel MOSFET (200V, 5.2A)

Description

The IRF620 is a high-performance N-channel MOSFET widely used for power switching and amplification in various electronic circuits. It is designed to handle high-voltage and high-current applications, making it ideal for a range of power electronics and motor control systems. Key Features of IRF620 MOSFET N-Channel (200V, 5.2A): N-Channel Configuration: The IRF620 is an N-channel MOSFET, meaning that it has a negative channel where the current flows from the drain to the source when the gate-to-source voltage (Vgs) is positive and exceeds a certain threshold. Voltage Rating: The drain-source voltage (Vds) rating is 200V, meaning the MOSFET can safely handle up to 200V between the drain and source terminals, allowing it to be used in higher-voltage applications. Current Rating: It can handle a continuous drain current (Id) of up to 5.2A, which makes it suitable for medium-power applications such as switching and driving motors, relays, or other power components. Gate Threshold Voltage (Vgs(th)): The gate threshold voltage is typically in the range of 2-4V. This is the voltage required to turn on the MOSFET, allowing current to flow between the drain and source. Rds(on) (On-Resistance): The Rds(on) (drain-to-source on-resistance) is 0.27Ω (typical), meaning that when the MOSFET is fully turned on, the resistance between the drain and source is relatively low, minimizing power losses and heat dissipation during operation. Package Type: The IRF620 is typically available in a TO-2