IRF9620

Description

IRF9620PBF The HEXFET technology is the key to the international Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels of approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contributes to its wide acceptance throughout the industry. Features Dynamic dv/dt rating P-Channel fast switching Ease of Paralleling Simple drive requirements Detailed Specifications Attribute Value Drain Source Voltage (Vdss) 200V Continuous Drain Current (Id) 3.5A Power Dissipation (Pd) 40W Drain Source On Resistance (RDS(on)@Vgs,Id) 1.5Ω@10V,1.5A Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA Type P Channel Input Capacitance (Ciss@Vds) 350pF@25V Total Gate Charge (Qg@Vgs) 22nC@10V Operating Temperature -55℃~+150℃@(Tj) Related Documents IRF9620 Datasheet