IRF530 N-Channel MOSFET Transistor

Description

IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A. In this series, there are other transistors available with slightly different specifications like IRF531, IRF532, and IRF533. The user can operate this MOSFET by the output of ICs and microcontrollers because it is designed to operate with a low gate driving current. This MOSFET can operate in the temperature range of -55˚C to 175 ˚C. It is more popular in industries due to its low cost and ruggedized design. It also features low-on-state resistance and fast switching. For long-life performance, all components use at least 20% below their maximum limit. The maximum operating current of IRF530 is 14 A. Hence, for a better life, it must be operating around 11.2A current and load voltage below 80V. IRF530 Pinout Description Pin No Pin Name Pin Description 1 Gate Control the biasing of MOSFET 2 Drain Current flows-in through Drain 3 Source Current flows-out through Source Features & Specifications Dynamic dv/dt rating Fast switching Ease of paralleling Required simple drive circuit Repetitive avalanche rated Maximum Drain-to-source voltage VDS: 100V Maximum continuous drain current ID: 14A Pulse drain current: 56A Maximum power dissipation: 88W Maximum gate-to-source voltage: ±20V Peak diode recovery dv/dt: 5.5V/ns On-state resistance: 0.16Ω Total gate charge Qg: 26nC Operating