Original 10N60 MOSFET N-Channel (600V, 10A)

Description

FEATURES: New revolutionary high voltage technology Worldwide best RDS(on) in TO 247 Ultra low gate charge Periodic avalanche rated SPECIFICATIONS: Drain Current: ID= 10A at TC=25℃ Drain Source Voltage: VDS = 600V Static Drain-Source On-Resistance: RDS(on) < 0.07 Ω Package: TO-247