MOSFET

Description

(HM3401A ) P-Channel Enhancement Mode Field Effect TransistorThe 3401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applicationsType Designator: 3401AMarking Code: 3401AType of Transistor: MOSFET Type of Control Channel: P -ChannelPd - Maximum Power Dissipation: 1.3 W|Vds| - Maximum Drain-Source Voltage: 30 V|Vgs| - Maximum Gate-Source Voltage: 12 V|Vgs(th)| - Maximum Gate-Threshold Voltage: 1.3 V|Id| - Maximum Drain Current: 4.4 ATj - Maximum Junction Temperature: 150 °CQg - Total Gate Charge: 9.5 nCtr - Rise Time: 3 nSCoss - Output Capacitance: 115 pFRds - Maximum Drain-Source On-State Resistance: 0.052 OhmPackage: SOT23 datasheet : https://alltransistors.com/adv/pdfview.php?doc=3401a.pdf&dire=_goford