FQPF20N60 MOSFET N-Channel (600V -20A) TO-220

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Type Designator: 20N60 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 416 W Maximum Drain-Source Voltage |Vds|: 600 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Drain Current |Id|: 20 A Maximum Junction Temperature (Tj): 150 °C Rise Time (tr): 130 nS Drain-Source Capacitance (Cd): 330 pF Maximum Drain-Source On-State Resistance (Rds): 0.32 Ohm