B817 (2SB817) Power Transistor PNP (160V , 12A)

Description

Features : Type Designator: 2SB817 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 160 V Maximum Collector-Emitter Voltage |Vce|: 160 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 12 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 7.5 MHz Collector Capacitance (Cc): 300 pF Forward Current Transfer Ratio (hFE), MIN: 60 Noise Figure, dB: - Package: TO220