MJE13006 Transistor NPN (300V , 8A)

Description

MJE13006 Type Designator: MJE13006 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 80 W Maximum Collector-Base Voltage |Vcb|: 600 V Maximum Collector-Emitter Voltage |Vce|: 300 V Maximum Emitter-Base Voltage |Veb|: 9 V Maximum Collector Current |Ic max|: 8 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 4 MHz Collector Capacitance (Cc): 110 pF Forward Current Transfer Ratio (hFE), MIN: 8