BU2525DF Power Transistor NPN (800V , 12A)

Description

Philips Semiconductors Product specification GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features : Type Designator: BU2525DF Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 45 W Maximum Collector-Base Voltage |Vcb|: 800 V Maximum Collector-Emitter Voltage |Vce|: 800 V Maximum Emitter-Base Voltage |Veb|: 13.5 V Maximum Collector Current |Ic max|: 12 A Max. Operating Junction Temperature (Tj): 150 °C Collector Capacitance (Cc): 145 pF Forward Current Transfer Ratio (hFE), MIN: 11 Noise Figure, dB: - Package: SOT199