S8050

Description

S8050 Pin Description Pin Number Pin Name Description 1 Emitter Current Drains out through emitter 2 Base Controls the biasing of transistor 3 Collector Current flows in through collector Features and Specifications Low Voltage, High Current NPN Transistor Small Signal Transistor Maximum Power: 2 Watts Maximum DC Current Gain (hFE) is 400 Continuous Collector current (IC) is 700mA Base- Emitter Voltage (VBE) is 5V Collector-Emitter Voltage (VCE) is 20V Collector-Base Voltage (VCB) is 30V High Used in push-pull configuration doe Class B amplifiers Available in To-92 Package Note: Complete Technical Details can be found in the S8050 datasheet given at the end of this page. Complementary PNP Transistors S8550 Alternative NPN Transistors S9014,MPSA42, SS8050, BC547, 2N2369, 2N3055, 2N3904, 2N3906 S8050 Equivalent Transistors 2N5830, S9013 Brief Description of S8050 S8050 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. It has a maximum gain value of 400; this value determines the amplification capacity of the transistor normally S8050. Since it is very high it is normally used for amplification purposes. However at a normal operating collector current the typical value of gain will be 110. The maximum amount of current that could flow through the Collector pin is 700mA, hence we cannot drive loads that consume more than 700mA using t