FQA20N60 MOSFET N-Channel (600V -20A) - (Large - TO-3PN)

Description

Description FQA20N60 N-Channel MOSFET, 20 A, 600V, 3-Pin TO-3PN Fairchild Semiconductors new QFET? Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET? process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices. Specifications: Attribute Value Channel Type N Maximum Continuous Drain Current – continuous TC=25°C 19.5A – continuous TC=100°C 12.3 Maximum Drain Source Voltage 600 V Package Type TO-3PN Mounting Type Through Hole Pin Count 3 Maximum Drain Source Resistance 70 m? Channel Mode Enhancement Minimum Gate Threshold Voltage 3V Maximum Power Dissipation 200 W Transistor Configuration Single Maximum Gate Source Voltage -30 V, +30 V Number of Elements per Chip 1 Width 5mm Maximum Operating Temperature +150 ?C Length 15.8mm Transistor Material Si Typical Gate Charge @ Vgs 85 nC @ 10 V Minimum Operating Temperature -55 ?C Height 18.9mm Series QFET Package Includes: 1x FQA20N60 MOSFET Datasheet: FQA20N60 Datasheet