BU2508AF Power Transistor NPN (700V , 8A)

Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features : Type Designator: BU2508AF Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 45 W Maximum Collector-Base Voltage |Vcb|: 1500 V Maximum Collector-Emitter Voltage |Vce|: 700 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 8 A Max. Operating Junction Temperature (Tj): 150 °C Collector Capacitance (Cc): 90 pF Forward Current Transfer Ratio (hFE), MIN: 4 Package: SOT199