BUZ11 MOSFET N-Ch (50V, 30A)

Description

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuitsBUZ11 Pin Configuration Pin No Pin Name 1 Gate 2 Drain 3 Source BUZ11 Key FeaturesTypical RDS(on) = 0.03 ΩAvalanche Rugged Technology100% Avalanche TestedHigh Current Capability175 C Operating TemperatureLinear Transfer CharacteristicsHigh Input ImpedanceMajority Carrier DeviceSpecification Id (mA) Pd Vds (max) Vgs Rds cd 36 120 50 20 0.04 1500pF BUK456 Equivalent/Alternate:BUZ100L, BUZ100S, BUZ100SL-4, BUZ101, BUZ101L, BUZ101SApplicationSwitching RegulatorsSwitching ConvertersMotor DriversRelay DriversYou can download this datasheet for BUZ11 33A 50V N-Channel Power MOSFET from the link given below:Download Datasheet