C5353 Transistor PNP (800V , 3A)

Description

Description This is Silicon NPN Triple Diffused Type Transistor (PCT process). Features 1. Excellent switching times: tr= 0.7 μs (max), tf= 0.5 μs (max) 2. High collectors breakdown voltage: VCEO= 800 V Absolute maximum ratings ( Ta=25°C ) 1. Collector to Base Voltage: Vcbo = 900 V 2. Collector to Emitter Voltage: Vceo = 800 V 3. Emitter to Base Voltage: Vebo = 7 V 4. Collector Current: Ic = 3A 5. Total Dissipation : Pc = 2.0 W 6. Junction Temperature: Tj = 150°C 7. Storage Temperature: Tsg = -55 ~ +150°C Applications 1. Switching Regulator and High Voltage Switching 2. High-Speed DC-DC Converter